2ED2304S06FXUMA1 vs 2ED21064S06JXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2304S06FXUMA1 dari Infineon dan 2ED21064S06JXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2304S06FXUMA1 2ED21064S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Technology Infineon thin-film SOI —
Blocking Voltage (High-Side) 650 V —
Source Current (typ.) 0.36 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V / 5 V CMOS
VCC Supply Range 10 V to 17 V —
Bootstrap Diode Integrated (BSD) Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) —
Interlock / Anti-Shoot-Through Built-in —
Propagation Delay (typ.) 200 ns —
Rentang Suhu Kerja -40C to +125C —
Paket PG-DSO-8-910 (DSO-8) PG-DSO-14 (14-pin SOIC)
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 [DATA_NEEDED: MSL level]
Status RoHS Compliant ROHS3 Compliant
Fungsi — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologi — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Suhu Kerja — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon