2ED2304S06FXUMA1 vs 2ED21064S06JXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2304S06FXUMA1 disebabkan oleh Infineon dan 2ED21064S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 2ED2304S06FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Configuration | Half-Bridge (High-Side + Low-Side) | — |
| Technology | Infineon thin-film SOI | — |
| Blocking Voltage (High-Side) | 650 V | — |
| Source Current (typ.) | 0.36 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Input Logic Compatibility | 3.3 V CMOS / LSTTL (Schmitt-trigger) | 3.3 V / 5 V CMOS |
| VCC Supply Range | 10 V to 17 V | — |
| Bootstrap Diode | Integrated (BSD) | Integrated |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB-VS) | — |
| Interlock / Anti-Shoot-Through | Built-in | — |
| Propagation Delay (typ.) | 200 ns | — |
| Gambaran Suhu Operasi | -40C to +125C | — |
| Kemasan | PG-DSO-8-910 (DSO-8) | PG-DSO-14 (14-pin SOIC) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 2 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | ROHS3 Compliant |
| Fungsi | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Tetstruktur | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Suhu Operasi | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |