2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8034G4CXTMA1 dari Infineon dan 2EDL900G3XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8034G4CXTMA1 2EDL900G3XTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A 4 A
Peak Sink Current 4 A 6 A
Jumlah Output 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V 3.3 V / 5 V / TTL (per datasheet)
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) Junction isolation (JI), 120 V
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Suhu Hubung Kerja -40 C to +125 C —
Paket PG-VDSON-10-2 (DSN-10) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL level] 1
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Number of Channels — 2 (high-side + low-side)
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Rentang Suhu Kerja — -40 C to +125 C
Status RoHS — Compliant

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