2EDL8034G4CXTMA1 vs 2EDL900G3XTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL8034G4CXTMA1 disebabkan oleh Infineon dan 2EDL900G3XTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL8034G4CXTMA1 2EDL900G3XTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge (High-Side / Low-Side) —
Configuration Non-Inverting —
Bootstrap Voltage (Max) 120 V —
Peak Source Current 3 A 4 A
Peak Sink Current 4 A 6 A
Bilangan Output 2 —
Rise Time (Typical) [DATA_NEEDED: rise time ns] —
Fall Time (Typical) [DATA_NEEDED: fall time ns] —
Propagation Delay (Typical) [DATA_NEEDED: propagation delay ns] —
Input Logic Compatibility 3.3 V / 5 V 3.3 V / 5 V / TTL (per datasheet)
VCC Supply Voltage [DATA_NEEDED: VCC range V] —
UVLO Protection Yes (VCC and VBS) —
Isolation Type Junction-isolated (level-shifted) Junction isolation (JI), 120 V
ESD Rating (HBM) [DATA_NEEDED: ESD HBM kV] —
Suhu Hubungan Operasi -40 C to +125 C —
Kemasan PG-VDSON-10-2 (DSN-10) with exposed pad TSNP-16 (3x3 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
Aras MSL [DATA_NEEDED: MSL level] 1
Product Type — Dual-channel level-shift gate driver IC
Topology Supported — Half-bridge, high-side, low-side
Number of Channels — 2 (high-side + low-side)
Drive Output Voltage Range — 4 V to 16 V
Supply Voltage (VDD/VBS) — 4 V to 16 V
Switching Device Supported — Si MOSFET, enhancement-mode GaN FET
Configurable Deadtime — Yes (programmable)
Integrated Current Sense Amplifier — Yes
PWM Modes — Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted
Gambaran Suhu Operasi — -40 C to +125 C
Status RoHS — Compliant

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