2EDL900G3XTMA1 vs 2EDL5023U2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL900G3XTMA1 dari Infineon dan 2EDL5023U2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL900G3XTMA1 2EDL5023U2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V —
Number of Channels 2 (high-side + low-side) 1 (Half-Bridge)
Peak Source Current 4 A —
Peak Sink Current 6 A —
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
Paket TSNP-16 (3x3 mm) with exposed pad PG-TSNP-12-5
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 C to +125 C —
Level MSL 1 —
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Driver Type — Non-Inverting
Jumlah Output — 2
Bootstrap Voltage Rating — 120 V
Peak Gate Drive Current — 3 A (typical sink/source)
Input Logic — TTL-compatible
Input Voltage (VDD) — 5 V (gate drive supply)
Enable Pin (EN) — Active-High (logic high or left open enables)
PWM Inputs — HI (high-side), LI (low-side)
Ground Return — VSS
Suhu Kerja — -40C to +125C (typical industrial range)
Tape and Reel Packaging — Yes

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