2EDL900G3XTMA1 vs 2EDL5023U2DXTMA1 比較
詳細並排比較 2EDL900G3XTMA1 由 Infineon 與 2EDL5023U2DXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 2EDL900G3XTMA1 | 2EDL5023U2DXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | — |
| Number of Channels | 2 (high-side + low-side) | 1 (Half-Bridge) |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | — |
| 封裝 | TSNP-16 (3x3 mm) with exposed pad | PG-TSNP-12-5 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -40 C to +125 C | — |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Driver Type | — | Non-Inverting |
| 輸出數量 | — | 2 |
| Bootstrap Voltage Rating | — | 120 V |
| Peak Gate Drive Current | — | 3 A (typical sink/source) |
| Input Logic | — | TTL-compatible |
| Input Voltage (VDD) | — | 5 V (gate drive supply) |
| Enable Pin (EN) | — | Active-High (logic high or left open enables) |
| PWM Inputs | — | HI (high-side), LI (low-side) |
| Ground Return | — | VSS |
| 工作溫度 | — | -40C to +125C (typical industrial range) |
| Tape and Reel Packaging | — | Yes |