2EDN7534RXTMA1 vs 1EDN7116GXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDN7534RXTMA1 dari Infineon dan 1EDN7116GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7534RXTMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Low-side gate driver Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Number of Channels 2 —
Peak Output Current (source/sink) 5 A / 5 A —
Supply Voltage (VCC) 4.5 V to 20 V 4.5 V to 5.5 V
Propagation Delay (typ) 19 ns —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V (absolute max) —
Konfigurasi Output Non-inverting —
Output Resistance (Ron) <1 ohm (typ) —
Under-Voltage Lockout (UVLO) Yes —
Suhu Kerja -40C to +125C —
Paket PG-TSSOP-8 PG-VSON-10-4 (3.0 mm × 3.0 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) MSL3
Status RoHS Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
Rentang Suhu Kerja — -40 °C to +125 °C
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

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