2EDN7534RXTMA1 vs 1EDN7116GXTMA1 比較

詳細並排比較 2EDN7534RXTMA1 由 Infineon 與 1EDN7116GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2EDN7534RXTMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Low-side gate driver Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Number of Channels 2 —
Peak Output Current (source/sink) 5 A / 5 A —
Supply Voltage (VCC) 4.5 V to 20 V 4.5 V to 5.5 V
Propagation Delay (typ) 19 ns —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V (absolute max) —
輸出配置 Non-inverting —
Output Resistance (Ron) <1 ohm (typ) —
Under-Voltage Lockout (UVLO) Yes —
工作溫度 -40C to +125C —
封裝 PG-TSSOP-8 PG-VSON-10-4 (3.0 mm × 3.0 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) MSL3
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
工作溫度範圍 — -40 °C to +125 °C
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

資料表與資源

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