BSC011N03LSTATMA1 vs BSC12DN20NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC011N03LSTATMA1 dari Infineon dan BSC12DN20NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC011N03LSTATMA1 BSC12DN20NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 200 V
Continuous Drain Current (ID) at TA=25C 39 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 1.1 mOhm (typical 0.9 mOhm) —
Gate-Source Threshold Voltage VGS(th) typ 2 V —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) typ 72 nC —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8 FL (8-pin, exposed drain pad) PG-TDSON-8-5
Tipe Mounting Surface Mount Surface Mount
Technology Trench MOSFET OptiMOS power MOSFET
Configuration Single with built-in diode Single N-channel
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Product Family — OptiMOS 200V
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 11.3 A
Power Dissipation (PD, Tc) — 50 W
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 8

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