BSC011N03LSTATMA1 vs BSC12DN20NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC011N03LSTATMA1 disebabkan oleh Infineon dan BSC12DN20NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC011N03LSTATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-5 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS power MOSFET |
| Configuration | Single with built-in diode | Single N-channel |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 200V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Kiraan Pin | — | 8 |