BSC014N04LSATMA1 vs BSC0921NDIATMA1 Perbandingan
Perbandingan bersamaan detil BSC014N04LSATMA1 dari Infineon dan BSC0921NDIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LSATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TISON-8 (8-pin, exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 25V (N-channel) |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | 1 (per Infineon OptiMOS family) |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Suhu Kerja | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |