BSC014N04LSATMA1 vs BSC0921NDIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSATMA1 disebabkan oleh Infineon dan BSC0921NDIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N04LSATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TISON-8 (8-pin, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 25V (N-channel) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | 1 (per Infineon OptiMOS family) |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Suhu Operasi | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |