BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC015NE2LS5IATMA1 dari Infineon dan ISC015N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC015NE2LS5IATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Paket PG-TDSON-8-6 (SuperSO8 5x6) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 8
Technology OptiMOS 5 trench OptiMOS 5 (trench MOSFET)
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +175 C (junction, per OptiMOS 5)
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per Infineon SuperSO8 family)
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 3.4 V (typ)
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Paket / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Drive Level — Normal Level (VGS(th) ~3.4 V)

Spek dan Sumber

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