BSC015NE2LS5IATMA1 vs ISC015N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC015NE2LS5IATMA1 disebabkan oleh Infineon dan ISC015N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC015NE2LS5IATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Kemasan PG-TDSON-8-6 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Technology OptiMOS 5 trench OptiMOS 5 (trench MOSFET)
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +175 C (junction, per OptiMOS 5)
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (per Infineon SuperSO8 family)
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 3.4 V (typ)
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Kemasan / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Drive Level — Normal Level (VGS(th) ~3.4 V)

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