BSC040N10NS5ATMA1 vs BSC035N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N10NS5ATMA1 dari Infineon dan BSC035N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N10NS5ATMA1 BSC035N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Maximum On-Resistance (RDS(on)) 4 mOhm —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) max 136 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 139 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Capacitance Reduction Up to 44% vs previous generation —
RDS(on) Reduction Up to 43% vs previous generation —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per Infineon OptiMOS 5 family) —
Manufacturer — Infineon Technologies
Part Number — BSC035N10NS5ATMA1
Drain-Source Voltage (VDS max) — 100 V
Continuous Drain Current (ID, Tc=25C) — 100 A
On-Resistance (RDS(on) max) — 3.5 mOhm
Power Dissipation (TA=25C) — 2.5 W
Power Dissipation (Tc=25C) — 156 W
Configuration — Single N-channel MOSFET
Gate Drive — Logic-level compatible (10V VGS)
Level MSL — [DATA_NEEDED: MSL rating per JEDEC J-STD-020]
Packaging — Tape & Reel (T&R)

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