BSC040N10NS5ATMA1 vs BSC035N10NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC040N10NS5ATMA1 sa pamamagitan ng Infineon at BSC035N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 ✓ NakahandaInfineon
BSC035N10NS5ATMA1 - 100V 3.5mOhm N-Ch OptiMOS 5 MOSFET | Infineon
BSC035N10NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC040N10NS5ATMA1 | BSC035N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC035N10NS5ATMA1 |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| On-Resistance (RDS(on) max) | — | 3.5 mOhm |
| Power Dissipation (TA=25C) | — | 2.5 W |
| Power Dissipation (Tc=25C) | — | 156 W |
| Configuration | — | Single N-channel MOSFET |
| Gate Drive | — | Logic-level compatible (10V VGS) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Packaging | — | Tape & Reel (T&R) |