BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 Perbandingan

Perbandingan bersamaan detil BSC118N10NSGATMA1 dari Infineon dan BSC265N10LSFGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC118N10NSGATMA1 BSC265N10LSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 2 —
FET Type N-Channel N-Channel
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Paket PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +150 C —
Technology Trench MOSFET OptiMOS 2 (TrenchFET)
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Bebas Halogen Yes —
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Rentang Suhu Kerja — -55 C to +150 C (junction)
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Avalanche Rated — Yes
Series — OptiMOS 2

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