BSC118N10NSGATMA1 vs BSC265N10LSFGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC118N10NSGATMA1 disebabkan oleh Infineon dan BSC265N10LSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC118N10NSGATMA1 BSC265N10LSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 2 —
FET Type N-Channel N-Channel
Mode Enhancement (Normal Level) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Ta=25C 11 A —
Continuous Drain Current (ID) at Tc=25C 71 A —
Power Dissipation (PD) at Tc=25C 114 W —
Kemasan PG-TDSON-8-1 (TDSON EP, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +150 C —
Technology Trench MOSFET OptiMOS 2 (TrenchFET)
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Boson Bebas Yes —
JEDEC Qualification Qualified per target application —
Target Application High-frequency SMPS, synchronous rectification —
Gate Charge x RDS(on) FOM Excellent (per datasheet) —
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Gambaran Suhu Operasi — -55 C to +150 C (junction)
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Avalanche Rated — Yes
Series — OptiMOS 2

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