BSD235CH6327XTSA1 vs BSS127H6327XTSA2 Perbandingan
Perbandingan bersamaan detil BSD235CH6327XTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSD235CH6327XTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | 500 mW (Ta) |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| Status RoHS | Compliant (lead-free) | Compliant (lead-free) |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Jumlah Pin | 6 | 3 |
| FET Type | — | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (logic level, rated) |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Paket | — | SOT-23-3 (PG-SOT23) |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| Bebas Halogen | — | Yes, per IEC 61249-2-21 |