BSD235CH6327XTSA1 vs BSS127H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD235CH6327XTSA1 disebabkan oleh Infineon dan BSS127H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD235CH6327XTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW 500 mW (Ta)
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) Compliant (lead-free)
Aras MSL 1 [DATA_NEEDED: MSL rating]
Kiraan Pin 6 3
FET Type — N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Suhu Hubungan Operasi — -55 C to +150 C
Kemasan — SOT-23-3 (PG-SOT23)
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Boson Bebas — Yes, per IEC 61249-2-21

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