BSL606SNH6327XTSA1 vs BTS3118NHUMA1 Perbandingan

Perbandingan bersamaan detil BSL606SNH6327XTSA1 dari Infineon dan BTS3118NHUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSL606SNH6327XTSA1 BTS3118NHUMA1
Merek Infineon Infineon
Kategori MOSFETs Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Total Gate Charge (Qg) 5.6 nC (max) —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT223-4
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Switch Type — Low-Side Power Switch
Konfigurasi Output — 1:1
Jumlah Output — 1
Continuous Drain Current — 2.17 A
Operating Voltage (Vbb) — 6 V to 18 V nominal (overvoltage protected)
On-State Resistance (RDS(on)) — [DATA_NEEDED: typical RDS(on) at 25C]
Input Logic Level — Logic-level (3.3 V / 5 V MCU compatible)
Input Protection — ESD protected
Thermal Protection — Thermal shutdown with latch
Fault Protection — Overload, short-circuit, overvoltage, current limit
Suhu Kerja — -40 C to +150 C junction
RoHS Compliance — Green product, RoHS compliant
Process Technology — Smart SIPMOS (vertical N-channel)

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