BSL606SNH6327XTSA1 vs BTS3118NHUMA1 比較
詳細並排比較 BSL606SNH6327XTSA1 由 Infineon 與 BTS3118NHUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSL606SNH6327XTSA1 | BTS3118NHUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET (Enhancement Mode) | — |
| Technology | OptiMOS3 trench MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 4.5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 60 mOhm (max, VGS = 10 V) | — |
| Total Power Dissipation (PD) at Ta | 2 W | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Total Gate Charge (Qg) | 5.6 nC (max) | — |
| 工作溫度範圍 | -55C to +150C (Tj) | — |
| 封裝 | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) | PG-SOT223-4 |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant (Pb-free plating) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Switch Type | — | Low-Side Power Switch |
| 輸出配置 | — | 1:1 |
| 輸出數量 | — | 1 |
| Continuous Drain Current | — | 2.17 A |
| Operating Voltage (Vbb) | — | 6 V to 18 V nominal (overvoltage protected) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: typical RDS(on) at 25C] |
| Input Logic Level | — | Logic-level (3.3 V / 5 V MCU compatible) |
| Input Protection | — | ESD protected |
| Thermal Protection | — | Thermal shutdown with latch |
| Fault Protection | — | Overload, short-circuit, overvoltage, current limit |
| 工作溫度 | — | -40 C to +150 C junction |
| RoHS Compliance | — | Green product, RoHS compliant |
| Process Technology | — | Smart SIPMOS (vertical N-channel) |