BSL606SNH6327XTSA1 vs BTS3118NHUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL606SNH6327XTSA1 disebabkan oleh Infineon dan BTS3118NHUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL606SNH6327XTSA1 BTS3118NHUMA1
Merek Infineon Infineon
Kategori MOSFETs Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Total Gate Charge (Qg) 5.6 nC (max) —
Gambaran Suhu Operasi -55C to +150C (Tj) —
Kemasan PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT223-4
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant (Pb-free plating) —
Aras MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Switch Type — Low-Side Power Switch
Konfigurasi Output — 1:1
Bilangan Output — 1
Continuous Drain Current — 2.17 A
Operating Voltage (Vbb) — 6 V to 18 V nominal (overvoltage protected)
On-State Resistance (RDS(on)) — [DATA_NEEDED: typical RDS(on) at 25C]
Input Logic Level — Logic-level (3.3 V / 5 V MCU compatible)
Input Protection — ESD protected
Thermal Protection — Thermal shutdown with latch
Fault Protection — Overload, short-circuit, overvoltage, current limit
Suhu Operasi — -40 C to +150 C junction
RoHS Compliance — Green product, RoHS compliant
Process Technology — Smart SIPMOS (vertical N-channel)

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