BSP135H6327XTSA1 vs BSO613SPVGXUMA1 Perbandingan

Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSO613SPVGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP135H6327XTSA1 BSO613SPVGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode P-Channel
Drain-Source Voltage (VDS) 600 V -60 V
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Paket PG-SOT223-4 (SOT-223-3 plus tab) PG-DSO-8-6 (Power-SO-8)
Tipe Mounting Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) OptiMOS (Trench)
Rentang Suhu Kerja -55C to +150C (junction, typical) -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Status RoHS Compliant Compliant
Level MSL 1 MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-V]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)
Jumlah Pin — 8 (6 active, 2 thermal/NC)

Spek dan Sumber

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