BSP135H6327XTSA1 vs BSO613SPVGXUMA1 比較
詳細並排比較 BSP135H6327XTSA1 由 Infineon 與 BSO613SPVGXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP135H6327XTSA1 | BSO613SPVGXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP135H6327XTSA1 | — |
| FET Type | N-Channel, Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) | 600 V | -60 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | — |
| 封裝 | PG-SOT223-4 (SOT-223-3 plus tab) | PG-DSO-8-6 (Power-SO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | OptiMOS (Trench) |
| 工作溫度範圍 | -55C to +150C (junction, typical) | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-V] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| 腳位數 | — | 8 (6 active, 2 thermal/NC) |