BSP135H6327XTSA1 vs BSP129H6906XTSA1 Perbandingan
Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSP129H6906XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| Paket | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Rentang Suhu Kerja | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | — | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | — | [DATA_NEEDED: VGS(off) typical value] |
| Jumlah Pin | — | 3 functional + 1 tab (4 leads) |
| ESD Protection | — | Integrated Zener diodes on gate |