BSP135H6327XTSA1 vs BSP129H6906XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6327XTSA1 sa pamamagitan ng Infineon at BSP129H6906XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| Packhaging | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | — | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | — | [DATA_NEEDED: VGS(off) typical value] |
| Bilang ng Pins | — | 3 functional + 1 tab (4 leads) |
| ESD Protection | — | Integrated Zener diodes on gate |