BSP135H6327XTSA1 vs BSP129H6906XTSA1 比較
詳細並排比較 BSP135H6327XTSA1 由 Infineon 與 BSP129H6906XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSP135H6327XTSA1 | BSP129H6906XTSA1 |
| FET Type | N-Channel, Depletion Mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 120 mA | — |
| Power Dissipation (PD) | 1.8 W | — |
| On-Resistance RDS(on) max | 45 ohm at VGS = 0 V | — |
| On-Resistance RDS(on) | 25 ohm (typical, per digchip) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Operating Mode | Normally ON (depletion) | Normally-On (Depletion) |
| 封裝 | PG-SOT223-4 (SOT-223-3 plus tab) | PG-SOT223-4 (SOT-223) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | SIPMOS (planar DMOS) | — |
| 工作溫度範圍 | -55C to +150C (junction, typical) | [DATA_NEEDED: TJ max] |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (unlimited floor life) |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| Drain-Source On-Resistance (RDS(on)) | — | 6 Ohm (max) |
| Gate-Source Pinch-Off Voltage | — | [DATA_NEEDED: VGS(off) typical value] |
| 腳位數 | — | 3 functional + 1 tab (4 leads) |
| ESD Protection | — | Integrated Zener diodes on gate |