BSP135H6327XTSA1 vs BSP129H6906XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6327XTSA1 disebabkan oleh Infineon dan BSP129H6906XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP135H6327XTSA1 BSP129H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 BSP129H6906XTSA1
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) Normally-On (Depletion)
Kemasan PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223)
Jenis Pemasangan Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Gambaran Suhu Operasi -55C to +150C (junction, typical) [DATA_NEEDED: TJ max]
Status RoHS Compliant Compliant
Aras MSL 1 1 (unlimited floor life)
Continuous Drain Current (ID) at TA=25C — 350 mA
Power Dissipation (PD) at TA=25C — 1.8 W
Drain-Source On-Resistance (RDS(on)) — 6 Ohm (max)
Gate-Source Pinch-Off Voltage — [DATA_NEEDED: VGS(off) typical value]
Bilangan Pin — 3 functional + 1 tab (4 leads)
ESD Protection — Integrated Zener diodes on gate

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