BSP135H6327XTSA1 vs BSP92PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSP92PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP135H6327XTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 600 V -250 V
Continuous Drain Current (ID) 120 mA -260 mA (Ta)
Power Dissipation (PD) 1.8 W 1.8 W (Ta)
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Paket PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223-4)
Tipe Mounting Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Rentang Suhu Kerja -55C to +150C (junction, typical) —
Status RoHS Compliant —
Level MSL 1 1 (unlimited)
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Tipe Transistor — P-Channel Enhancement Mode MOSFET
Channel Polarity — P-Channel
Suhu Kerja — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Jumlah Pin — 4 (Gate, Drain, Drain, Source)

Spek dan Sumber

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