BSP135H6327XTSA1 vs BSP92PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6327XTSA1 disebabkan oleh Infineon dan BSP92PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP135H6327XTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 600 V -250 V
Continuous Drain Current (ID) 120 mA -260 mA (Ta)
Power Dissipation (PD) 1.8 W 1.8 W (Ta)
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Kemasan PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223-4)
Jenis Pemasangan Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Gambaran Suhu Operasi -55C to +150C (junction, typical) —
Status RoHS Compliant —
Aras MSL 1 1 (unlimited)
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Channel Polarity — P-Channel
Suhu Operasi — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Kiraan Pin — 4 (Gate, Drain, Drain, Source)

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