BSP135H6327XTSA1 vs BSP92PH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6327XTSA1 sa pamamagitan ng Infineon at BSP92PH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP135H6327XTSA1 BSP92PH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 600 V -250 V
Continuous Drain Current (ID) 120 mA -260 mA (Ta)
Power Dissipation (PD) 1.8 W 1.8 W (Ta)
On-Resistance RDS(on) max 45 ohm at VGS = 0 V —
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Operating Mode Normally ON (depletion) —
Packhaging PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223-4)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Hanay ng Temperature na Operasyon -55C to +150C (junction, typical) —
Tindminan RoHS Compliant —
Level ng MSL 1 1 (unlimited)
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Uri ng Transistor — P-Channel Enhancement Mode MOSFET
Channel Polarity — P-Channel
Temperature na Operasyon — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Bilang ng Pin — 4 (Gate, Drain, Drain, Source)

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