BSP135H6906XTSA1 vs BSP129H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP135H6906XTSA1 dari Infineon dan BSP129H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP135H6906XTSA1 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA 350 mA
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Rentang Suhu Kerja -55C to +150C —
Paket PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223, 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) —
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes Yes
Drain-Source Voltage (VDS) — 240 V
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Suhu Kerja — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

Spek dan Sumber

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