BSP135H6906XTSA1 vs BSP129H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6906XTSA1 sa pamamagitan ng Infineon at BSP129H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP135H6906XTSA1 BSP129H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA 350 mA
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223, 3+Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) —
Level ng MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes Yes
Drain-Source Voltage (VDS) — 240 V
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Temperature na Operasyon — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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