BSP135H6906XTSA1 vs BSP129H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6906XTSA1 disebabkan oleh Infineon dan BSP129H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP135H6906XTSA1 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA 350 mA
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-SOT223-4 (SOT-223, 3+tab) PG-SOT223-4 (SOT-223, 3+Tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) —
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes Yes
Drain-Source Voltage (VDS) — 240 V
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Suhu Operasi — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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