BSP315PH6327XTSA1 vs BSS169H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP315PH6327XTSA1 dari Infineon dan BSS169H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP315PH6327XTSA1 BSS169H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel Depletion Mode
Technology OptiMOS (enhancement mode) Depletion-mode vertical DMOS
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) 170 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 360 mW (Ta)
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] Pinch-off approx. -3.5 V (typical)
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) [DATA_NEEDED: junction/ambient operating temperature range]
Paket PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 100 V
RDS(on) Maximum — 6 Ohm at VGS=0 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute maximum rating]
Jumlah Pin — 3
Status RoHS — Compliant
Lead-Free — Yes
Drain Current at 25C — 170 mA continuous
Typical RDS(on) — [DATA_NEEDED: typical RDS(on) value]

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