BSP315PH6327XTSA1 vs BSS87H6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSP315PH6327XTSA1 dari Infineon dan BSS87H6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP315PH6327XTSA1 BSS87H6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel enhancement-mode
Technology OptiMOS (enhancement mode) —
Drain-Source Voltage (VDS) -60 V 240 V
Continuous Drain Current (ID) -1.17 A (Ta) 260 mA (Ta)
Power Dissipation (PD) 1.8 W (Ta) 1 W (Ta)
Gate-Source Voltage (VGS) ±20 V (max) +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C (junction)
Paket PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT89-4-2 (SOT-89)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Jumlah Pin — 3 (Gate / Drain / Source)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

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