BSP92PH6327XTSA1 vs BSP129H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP92PH6327XTSA1 dari Infineon dan BSP129H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP92PH6327XTSA1 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Paket PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223, 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Kerja -55C to +150C (Tj) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Jumlah Pin 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel, Depletion Mode
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

Spek dan Sumber

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