BSP92PH6327XTSA1 vs BSP129H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP92PH6327XTSA1 sa pamamagitan ng Infineon at BSP129H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSP92PH6327XTSA1 BSP129H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Uri ng Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Packhaging PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223, 3+Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Channel Polarity P-Channel —
Temperature na Operasyon -55C to +150C (Tj) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level ng MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Bilang ng Pin 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel, Depletion Mode
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Tindminan RoHS — Compliant
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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