BSP92PH6327XTSA1 vs BSP129H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP92PH6327XTSA1 disebabkan oleh Infineon dan BSP129H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP92PH6327XTSA1 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 240 V
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Kemasan PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223, 3+Tab)
Jenis Pemasangan Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Operasi -55C to +150C (Tj) -55 C to +150 C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Kiraan Pin 4 (Gate, Drain, Drain, Source) —
FET Type — N-Channel, Depletion Mode
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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