BSS119NH6327XTSA1 vs BSS308PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS119NH6327XTSA1 dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS119NH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET P-Channel Enhancement Mode MOSFET
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] [DATA_NEEDED: gate threshold voltage]
Gate Drive Voltage (VGS) ±20 V max —
Paket PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55 °C to +150 °C
Qualification AEC-Q101 (automotive grade) AEC-Q101 Automotive
Status RoHS Compliant Compliant
Lead-Free Yes —
Packaging Tape & Reel (3,000 pcs/reel) Tape & Reel (T/R)
Level MSL 1 [DATA_NEEDED: confirm from datasheet] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD) — 500 mW (Ta)
Paket / Case — PG-SOT23 (SOT-23-3)
Jumlah Pin — 3
Standard Reel Quantity — 3000 pcs

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