BSS119NH6327XTSA1 vs BSS308PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS119NH6327XTSA1 disebabkan oleh Infineon dan BSS308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS119NH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET P-Channel Enhancement Mode MOSFET
FET Technology Enhancement-mode, planar N-channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TA=25°C 190 mA —
Power Dissipation (PD) at TA=25°C 500 mW —
Drain-Source On-Resistance (RDS(on)) max 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] —
Gate Threshold Voltage (VGS(th)) 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] [DATA_NEEDED: gate threshold voltage]
Gate Drive Voltage (VGS) ±20 V max —
Kemasan PG-SOT23 (SOT-23-3) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] -55 °C to +150 °C
Qualification AEC-Q101 (automotive grade) AEC-Q101 Automotive
Status RoHS Compliant Compliant
Lead-Free Yes —
Packaging Tape & Reel (3,000 pcs/reel) Tape & Reel (T/R)
Aras MSL 1 [DATA_NEEDED: confirm from datasheet] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS P (small signal / small power MOSFET)
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD) — 500 mW (Ta)
Kemasan / Case — PG-SOT23 (SOT-23-3)
Bilangan Pin — 3
Standard Reel Quantity — 3000 pcs

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