BSS123IXTSA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS123IXTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS123IXTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS Small-Signal —
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID) at TA=25C 190 mA —
Power Dissipation (PD) at TA=25C 500 mW —
RDS(on) (typical, VGS=10 V) 2.4 ohm —
RDS(on) (max per family datasheet) 6 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] 4.5 V (logic level, rated)
Paket PG-SOT-23-3 (SOT-23-3) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (per family datasheet) —
Qualification Industrial —
Configuration Single N-Channel —
Lead-Free / RoHS Yes (per distributor listing) —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Gate Drive Logic Level Logic-level compatible —
FET Type — N-Channel SIPMOS, enhancement mode
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubung Kerja — -55 C to +150 C
Jumlah Pin — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Status RoHS — Compliant (lead-free)
Bebas Halogen — Yes, per IEC 61249-2-21

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