BSS123IXTSA1 vs BSS127H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123IXTSA1 disebabkan oleh Infineon dan BSS127H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS123IXTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS Small-Signal —
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID) at TA=25C 190 mA —
Power Dissipation (PD) at TA=25C 500 mW —
RDS(on) (typical, VGS=10 V) 2.4 ohm —
RDS(on) (max per family datasheet) 6 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] 4.5 V (logic level, rated)
Kemasan PG-SOT-23-3 (SOT-23-3) SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (per family datasheet) —
Qualification Industrial —
Configuration Single N-Channel —
Lead-Free / RoHS Yes (per distributor listing) —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Gate Drive Logic Level Logic-level compatible —
FET Type — N-Channel SIPMOS, enhancement mode
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubungan Operasi — -55 C to +150 C
Kiraan Pin — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Status RoHS — Compliant (lead-free)
Boson Bebas — Yes, per IEC 61249-2-21

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga