BSS123IXTSA1 vs BSS127H6327XTSA2 比較
詳細並排比較 BSS123IXTSA1 由 Infineon 與 BSS127H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS123IXTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS Small-Signal | — |
| Drain-Source Voltage (VDS) | 100 V | 600 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 4.5 V (logic level, rated) |
| 封裝 | PG-SOT-23-3 (SOT-23-3) | SOT-23-3 (PG-SOT23) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (per family datasheet) | — |
| Qualification | Industrial | — |
| Configuration | Single N-Channel | — |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Gate Drive Logic Level | Logic-level compatible | — |
| FET Type | — | N-Channel SIPMOS, enhancement mode |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | — | 500 mW (Ta) |
| 工作接面溫度 | — | -55 C to +150 C |
| 腳位數 | — | 3 |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| RoHS 狀態 | — | Compliant (lead-free) |
| 無鹵素 | — | Yes, per IEC 61249-2-21 |