BSS126H6327XTSA2 vs BSS119NH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS126H6327XTSA2 dari Infineon dan BSS119NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS126H6327XTSA2 | BSS119NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel Depletion Mode | — |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at Ta | 21 mA | — |
| Power Dissipation (PD) at Ta | 500 mW | — |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) | — |
| Gate-Source Voltage (VGS) Range | [DATA_NEEDED: VGS max/min] | — |
| Technology | SIPMOS (DMOS) | — |
| Paket | SOT-23-3 (PG-SOT23) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction, typical) | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| Jumlah Pin | 3 | — |
| Configuration | Single | — |
| Channel Mode | Depletion (normally-on at VGS = 0) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 [DATA_NEEDED: confirm from datasheet] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes (Infineon 'green' package) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Threshold Voltage (VGS(th)) | — | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Qualification | — | AEC-Q101 (automotive grade) |
| Packaging | — | Tape & Reel (3,000 pcs/reel) |