BSS126H6327XTSA2 vs BSS806NEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS126H6327XTSA2 dari Infineon dan BSS806NEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS126H6327XTSA2 BSS806NEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Paket SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction, typical) [DATA_NEEDED: operating temperature range]
Jumlah Pin 3 3 (Gate, Drain, Source)
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS806NEH6327XTSA1
Tipe Transistor — N-Channel MOSFET
Mode of Operation — Enhancement-mode
Drain-Source Voltage (VDS) — 20 V (maximum)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-Resistance RDS(on) — 57 mOhm (maximum)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

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