BSS126H6327XTSA2 vs BSS806NEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS126H6327XTSA2 disebabkan oleh Infineon dan BSS806NEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS126H6327XTSA2 BSS806NEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction, typical) [DATA_NEEDED: operating temperature range]
Kiraan Pin 3 3 (Gate, Drain, Source)
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS806NEH6327XTSA1
Jenis Transistor — N-Channel MOSFET
Mode of Operation — Enhancement-mode
Drain-Source Voltage (VDS) — 20 V (maximum)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-Resistance RDS(on) — 57 mOhm (maximum)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

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