BSS138LT1G vs BSS138L Perbandingan
Perbandingan bersamaan detil BSS138LT1G dari onsemi dan BSS138L dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS138LT1G | BSS138L |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 200 mA (Ta) | — |
| Power Dissipation (PD) | 225 mW (Ta) | — |
| On-Resistance Max (RDS(on)) | 3.5 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate-Source Voltage Max (VGS) | [DATA_NEEDED: maximum gate-source voltage] | — |
| Configuration | Single FET | Single FET |
| Channel Mode | Enhancement Mode | — |
| Paket | SOT-23-3 (TO-236) | SOT-23-3 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant (RoHS Compliant and Pb-free per Easybom) | [DATA_NEEDED: RoHS status] |
| Product Family | BSS138LT Series Small Signal MOSFET | — |
| Typical Applications | Computers, printers, cordless phones, DC-DC converters | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| VDS Drain-Source Voltage | — | 50 V |
| Continuous Drain Current (Ta) | — | 200 mA |
| Power Dissipation (Ta) | — | 350 mW |
| RDS(on) Max | — | 3.5 ohm |
| Technology | — | Trench MOSFET, high cell density |
| Gate Type | — | Logic Level |
| Switching Performance | — | Fast switching, rugged, reliable |
| Kapasitansi Masukan | — | [DATA_NEEDED: Ciss] |
| VGS Gate-Source Voltage | — | [DATA_NEEDED: VGS max rating] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | 3000 units per reel (tape and reel) |