BSS138LT1G vs BSS138L 比較

詳細並排比較 BSS138LT1G 由 onsemi 與 BSS138L 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSS138LT1G BSS138L
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) —
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET Single FET
Channel Mode Enhancement Mode —
封裝 SOT-23-3 (TO-236) SOT-23-3
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 Compliant (RoHS Compliant and Pb-free per Easybom) [DATA_NEEDED: RoHS status]
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Polarity — N-Channel
Operating Mode — Enhancement Mode
VDS Drain-Source Voltage — 50 V
Continuous Drain Current (Ta) — 200 mA
Power Dissipation (Ta) — 350 mW
RDS(on) Max — 3.5 ohm
Technology — Trench MOSFET, high cell density
Gate Type — Logic Level
Switching Performance — Fast switching, rugged, reliable
輸入電容 — [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage — [DATA_NEEDED: VGS max rating]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Packaging — 3000 units per reel (tape and reel)

資料表與資源

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